Proceedings of the Seventh International Symposium on Silicon-on-Insulator Technology and Devices

Proceedings of the Seventh International Symposium on Silicon-on-Insulator Technology and Devices

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1a#39;h.i IMm) aquot;4J: /I V E.n2 . Eo1 subband levels ! ^V6 E.1 -fol Ep? Ep3 3-D system 2- D system Fig. 2. Schematic band diagrams in ultra-thin nMOSFETs/SOI. The 3-D system and 2-D system are compared. Fx: conduction band bottom, Ev: valenceanbsp;...


Title:Proceedings of the Seventh International Symposium on Silicon-on-Insulator Technology and Devices
Author:Peter L. F. Hemment
Publisher:The Electrochemical Society - 1996-01-01
ISBN-13:

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